PART |
Description |
Maker |
ISPLSI2192VL-100LB144 ISPLSI2192VL-100LT128 ISPLSI |
2.5V In-System Programmable SuperFAST High Density PLD TRIAC STANDARD 12A 400V TO-220AB 2.5V In-System Programmable SuperFASTHigh Density PLD
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Lattice Semiconductor Corporation
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1024-60LH_883 ISPLSI1024-60LH_883 1024 1024-60LH/8 |
60 MHz in-system prommable high density PLD In-System Programmable High Density PLD EE PLD, 25 ns, PQCC68 :4; Features:Alumunium Foil Polyester/Tinned Copper Braid; Impedance:120ohm RoHS Compliant: Yes
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Lattice Semiconductor, Corp. Lattice Semiconductor Corporation LATTICE[Lattice Semiconductor] http://
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ISPLSI2032E ISPLSI2032E-110LJ44 ISPLSI2032E-110LT4 |
In-SystemProgrammableSuperFASTHighDensityPLD In-System Programmable SuperFASTHigh Density PLD In-System Programmable SuperFAST High Density PLD 在系统可编程超快高密度可编程逻辑器件
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Lattice Semiconductor Corporation Lattice Semiconductor, Corp.
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ISPLSI5512VA-70LB388 ISPLSI5512VA-70LB272 ISPLSI55 |
Electrically-Erasable Complex PLD In-System Programmable 3.3V SuperWIDEHigh Density PLD In-System Programmable 3.3V SuperWIDE High Density PLD In-System Programmable 3.3V SuperWIDE?High Density PLD
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Lattice Semiconductor Corporation
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ISPLSI2032A-110LT48I ISPLSI2032A-135LJI ISPLSI2032 |
In-System Programmable High Density PLD EE PLD, 8 ns, PQFP44 In-System Programmable High Density PLD 在系统可编程高密度可编程逻辑器件 In-System Programmable High Density PLD EE PLD, 10 ns, PQCC44 In-System Programmable High Density PLD EE PLD, 10 ns, PQFP48 In-System Programmable High Density PLD EE PLD, 7.5 ns, PQFP44
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Lattice Semiconductor Corporation Lattice Semiconductor, Corp.
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ISPLSI2032VE06 ISPLSI2032VE300LB49 ISPLSI2032VE300 |
3.3V In-System Programmable High Density SuperFAST⑩ PLD 3.3V In-System Programmable High Density SuperFAST?/a> PLD 3.3V In-System Programmable High Density SuperFAST PLD 3.3V In-System Programmable High Density SuperFAST垄芒 PLD 3.3V In-System Programmable High Density SuperFAST?/a> PLD 3.3V In-System Programmable High Density SuperFAST?PLD
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Lattice Semiconductor
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ISPLSI2128VL-100LB100 ISPLSI2128VL-100LB208 ISPLSI |
2.5V In-System Programmable SuperFAST⑩ High Density PLD 2.5V In-System Programmable SuperFAST High Density PLD 2.5VIn-SystemProgrammableSuperFASTHighDensityPLD Linear Motion Control; Series:LCL; Track Resistance:5kohm; Resistance Tolerance:20%; Power Rating:3W; Operating Temperature Range:-30 C to C; Resistor Element Material:Conductive Plastic RoHS Compliant: Yes Linear Motion Control; Series:LCP8; Track Resistance:10kohm; Resistance Tolerance: /-15%; Power Rating:0.2W; Operating Temperature Range:-30 C to 105 C; Resistor Element Material:Conductive Plastic RoHS Compliant: Yes EE PLD, 13 ns, PBGA208 Resistors, Variable sliding; Series:LCP15; Track Resistance:10kohm; Resistance Tolerance: /-10%; Power Rating:0.5W; Operating Temperature Range:-30 C to 105 C; Resistor Element Material:Conductive Plastic RoHS Compliant: Yes EE PLD, 13 ns, PBGA100 2.5V In-System Programmable SuperFASTHigh Density PLD EE PLD, 10 ns, PBGA100 2.5V In-System Programmable SuperFASTHigh Density PLD EE PLD, 8.5 ns, PBGA208 2.5V In-System Programmable SuperFASTHigh Density PLD EE PLD, 10 ns, PQFP176 2.5V In-System Programmable SuperFASTHigh Density PLD EE PLD, 8.5 ns, PQFP100 2.5V In-System Programmable SuperFASTHigh Density PLD EE PLD, 8.5 ns, PBGA100
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LATTICE[Lattice Semiconductor] LatticeSemiconductor Lattice Semiconductor Corporation Lattice Semiconductor, Corp.
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LTV8192M LTV-819-1S-TA LTV829S-V LTV-829S-TA LTV82 |
High Density Mounting Type Photocoupler 1 CHANNEL TRANSISTOR OUTPUT OPTOCOUPLER High Density Mounting Type Photocoupler 2 CHANNEL TRANSISTOR OUTPUT OPTOCOUPLER High Density Mounting Type Photocoupler(762.22 k) 高密度安装类型光电耦合62.22十一
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Lite-On Technology, Corp.
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SCF10000 SCF5000 SCF7500 SCF12500 SCF2500 |
High Voltage,High Density Fast Recovery Rectifier(反向电压2500V,温5℃时平均整流电流0.5A,高压,高密度,快速恢复整流器) High Voltage,High Density Fast Recovery Rectifier(反向电压12500V,温5℃时平均整流电流0.5A,高压,高密度,快速恢复整流器) High Voltage,High Density Fast Recovery Rectifier(反向电压7500V,温5℃时平均整流电流0.5A,高压,高密度,快速恢复整流器) High Voltage,High Density Fast Recovery Rectifier(反向电压10000V,温5℃时平均整流电流0.5A,高压,高密度,快速恢复整流器) High Voltage,High Density Fast Recovery Rectifier(反向电压5000V,温5℃时平均整流电流0.5A,高压,高密度,快速恢复整流器) FAST RECOVERY HIGH VOLTAGE RECTIFIER ASSEMBLY
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Semtech Corporation
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EDI3DG328V8D1 EDI3DG328V10D1 |
8Megx32 Synchronous High Density DRAM Modules 3.3V(125MHz,3.3V,8M x32同步高密度动态RAM模块) 8Megx32 Synchronous High Density DRAM Modules 3.3V(100MHz,3.3V,8M x32同步高密度动态RAM模块) 8Megx32同步高密度DRAM模块3.300MHz的,3.3分X32号,同步高密度动态内存模块)
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Bourns, Inc.
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M38230G4-XXXFP M38230G4-XXXHP M38231G4-XXXHP M3823 |
18-Mbit (512K x 36/1M x 18) Flow-Through SRAM; Architecture: Standard Sync, Flow-through; Density: 18 Mb; Organization: 512Kb x 36; Vcc (V): 3.1 to 3.6 V 36-Mbit QDR(TM)-II SRAM 4-Word Burst Architecture; Architecture: QDR-II, 4 Word Burst; Density: 36 Mb; Organization: 2Mb x 18; Vcc (V): 1.7 to 1.9 V 36-Mbit DDR-II SRAM 2-Word Burst Architecture; Architecture: DDR-II CIO, 2 Word Burst; Density: 36 Mb; Organization: 1Mb x 36; Vcc (V): 1.7 to 1.9 V 36-Mbit (1M x 36/2M x 18/512K x 72) Pipelined SRAM with NoBL(TM) Architecture; Architecture: NoBL, Pipeline; Density: 36 Mb; Organization: 1Mb x 36; Vcc (V): 2.4 to 2.6 V 72-Mbit (2M x 36/4M x 18/1M x 72) Pipelined SRAM with NoBL(TM) Architecture; Architecture: NoBL, Pipeline; Density: 72 Mb; Organization: 2Mb x 36; Vcc (V): 3.1 to 3.6 V 18-Mbit (512K x 36/1M x 18) Pipelined SRAM; Architecture: Standard Sync, Pipeline SCD; Density: 18 Mb; Organization: 1Mb x 18; Vcc (V): 3.1 to 3.6 V 36-Mbit (1M x 36/2M x 18/512K x 72) Pipelined SRAM with NoBL(TM) Architecture; Architecture: NoBL, Pipeline; Density: 36 Mb; Organization: 1Mb x 36; Vcc (V): 3.1 to 3.6 V 72-Mbit QDR(TM)-II SRAM 2-Word Burst Architecture; Architecture: QDR-II, 2 Word Burst; Density: 72 Mb; Organization: 2Mb x 36; Vcc (V): 1.7 to 1.9 V 18-Mbit (512K x 36/1M x 18) Flow-Through SRAM; Architecture: Standard Sync, Flow-through; Density: 18 Mb; Organization: 1Mb x 18; Vcc (V): 3.1 to 3.6 V 36-Mbit QDR(TM)-II SRAM 2-Word Burst Architecture; Architecture: QDR-II, 2 Word Burst; Density: 36 Mb; Organization: 1Mb x 36; Vcc (V): 1.7 to 1.9 V 36-Mbit (1M x 36/2 M x 18/512K x 72) Flow-Through SRAM with NoBL(TM) Architecture; Architecture: NoBL, Flow-through; Density: 36 Mb; Organization: 1Mb x 36; Vcc (V): 3.1 to 3.6 V 72-Mbit(2M x 36/4M x 18/1M x 72) Pipelined SRAM with NoBL(TM) Architecture; Architecture: NoBL, Pipeline; Density: 72 Mb; Organization: 1Mb x 72; Vcc (V): 2.4 to 2.6 V 72-Mbit QDR(TM)-II SRAM 2-Word Burst Architecture; Architecture: QDR-II, 2 Word Burst; Density: 72 Mb; Organization: 4Mb x 18; Vcc (V): 1.7 to 1.9 V 36-Mbit (1M x 36/2M x 18/512K x 72) Pipelined Sync SRAM; Architecture: Standard Sync, Pipeline SCD; Density: 36 Mb; Organization: 1Mb x 36; Vcc (V): 3.1 to 3.6 V 36-Mbit (1M x 36/2M x 18/512K x 72) Pipelined SRAM with NoBL(TM) Architecture; Architecture: NoBL, Pipeline; Density: 36 Mb; Organization: 2Mb x 18; Vcc (V): 3.1 to 3.6 V 36-Mbit (1M x 36/2M x 18/512K x 72) Pipelined SRAM with NoBL(TM) Architecture; Architecture: NoBL, Pipeline; Density: 36 Mb; Organization: 512Kb x 72; Vcc (V): 3.1 to 3.6 V 72-Mbit DDR-II SRAM 2-Word Burst Architecture; Architecture: DDR-II CIO, 2 Word Burst; Density: 72 Mb; Organization: 4Mb x 18; Vcc (V): 1.7 to 1.9 V Sync SRAM; Architecture: QDR-II, 2 Word Burst; Density: 36 Mb; Organization: 2Mb x 18; Vcc (V): 1.7 to 1.9 V 36-Mbit DDR-II SRAM 2-Word Burst Architecture; Architecture: DDR-II CIO, 2 Word Burst; Density: 36 Mb; Organization: 2Mb x 18; Vcc (V): 1.7 to 1.9 V 72-Mbit(2M x 36/4M x 18/1M x 72) Pipelined SRAM with NoBL(TM) Architecture; Architecture: NoBL, Pipeline; Density: 72 Mb; Organization: 2Mb x 36; Vcc (V): 2.4 to 2.6 V 72-Mbit(2M x 36/4M x 18/1M x 72) Pipelined SRAM with NoBL(TM) Architecture; Architecture: NoBL, Pipeline; Density: 72 Mb; Organization: 4Mb x 18; Vcc (V): 2.4 to 2.6 V 72-Mbit QDR(TM)-II SRAM 4-Word Burst Architecture; Architecture: QDR-II, 4 Word Burst; Density: 72 Mb; Organization: 4Mb x 18; Vcc (V): 1.7 to 1.9 V 72-Mbit (2M x 36/4M x 18/1M x 72) Pipelined SRAM with NoBL(TM) Architecture; Architecture: NoBL, Pipeline; Density: 72 Mb; Organization: 1Mb x 72; Vcc (V): 3.1 to 3.6 V 72-Mbit (2M x 36/4M x 18/1M x 72) Pipelined Sync SRAM; Architecture: Standard Sync, Pipeline SCD; Density: 72 Mb; Organization: 2Mb x 36; Vcc (V): 2.4 to 2.6 V 72-Mbit QDR(TM)-II SRAM 4-Word Burst Architecture (2.5 Cycle Read Latency); Architecture: QDR-II , 4 Word Burst; Density: 72 Mb; Organization: 4Mb x 18; Vcc (V): 1.7 to 1.9 V 72-Mbit DDR-II SRAM 2-Word Burst Architecture (2.0 Cycle Read Latency); Architecture: DDR-II CIO, 2 Word Burst; Density: 72 Mb; Organization: 2Mb x 36; Vcc (V): 1.7 to 1.9 V 36-Mbit (1M x 36/2M x 18/512K x 72) Pipelined Sync SRAM; Architecture: Standard Sync, Pipeline SCD; Density: 36 Mb; Organization: 1Mb x 36; Vcc (V): 3.1 to 3.6 V 单芯位CMOS微机 72-Mbit DDR-II SRAM 2-Word Burst Architecture; Architecture: DDR-II CIO, 2 Word Burst; Density: 72 Mb; Organization: 4Mb x 18; Vcc (V): 1.7 to 1.9 V 单芯位CMOS微机 18-Mbit (512K x 36/1M x 18) Flow-Through SRAM; Architecture: Standard Sync, Flow-through; Density: 18 Mb; Organization: 1Mb x 18; Vcc (V): 3.1 to 3.6 V 单芯位CMOS微机 SINGLE-CHIP 8-BIT CMOS MICROCOMPUTER 单芯位CMOS微机 72-Mbit(2M x 36/4M x 18/1M x 72) Pipelined SRAM with NoBL(TM) Architecture; Architecture: NoBL, Pipeline; Density: 72 Mb; Organization: 4Mb x 18; Vcc (V): 2.4 to 2.6 V 单芯位CMOS微机 72-Mbit(2M x 36/4M x 18/1M x 72) Pipelined SRAM with NoBL(TM) Architecture; Architecture: NoBL, Pipeline; Density: 72 Mb; Organization: 2Mb x 36; Vcc (V): 2.4 to 2.6 V 单芯位CMOS微机 72-Mbit QDR(TM)-II SRAM 4-Word Burst Architecture; Architecture: QDR-II, 4 Word Burst; Density: 72 Mb; Organization: 2Mb x 36; Vcc (V): 1.7 to 1.9 V 单芯位CMOS微机 72-Mbit QDR(TM)-II SRAM 2-Word Burst Architecture; Architecture: QDR-II, 2 Word Burst; Density: 72 Mb; Organization: 2Mb x 36; Vcc (V): 1.7 to 1.9 V 单芯位CMOS微机 36-Mbit QDR(TM)-II SRAM 4-Word Burst Architecture; Architecture: QDR-II, 4 Word Burst; Density: 36 Mb; Organization: 2Mb x 18; Vcc (V): 1.7 to 1.9 V 单芯位CMOS微机 SINGLE-CHIP 8-BIT CMOS MICROCOMPUTER 单芯8位CMOS微机 Sync SRAM; Architecture: QDR-II, 2 Word Burst; Density: 36 Mb; Organization: 2Mb x 18; Vcc (V): 1.7 to 1.9 V 单芯位CMOS微机 36-Mbit DDR-II SRAM 2-Word Burst Architecture; Architecture: DDR-II CIO, 2 Word Burst; Density: 36 Mb; Organization: 1Mb x 36; Vcc (V): 1.7 to 1.9 V 单芯位CMOS微机 72-Mbit DDR-II SRAM 2-Word Burst Architecture; Architecture: DDR-II CIO, 2 Word Burst; Density: 72 Mb; Organization: 2Mb x 36; Vcc (V): 1.7 to 1.9 V 36-Mbit QDR(TM)-II SRAM 2-Word Burst Architecture; Architecture: QDR-II, 2 Word Burst; Density: 36 Mb; Organization: 2Mb x 18; Vcc (V): 1.7 to 1.9 V
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Renesas Electronics Corporation. Renesas Electronics, Corp.
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